an ion implant of approximately 1 x 
/cm2 using, for example, phosphorus, arsenic, or boron to controllably increase or decrease the threshold voltage of a metal oxide semiconductor transistor. [SEMATECH]
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an ion implant of approximately 1 x /cm2 using, for example, phosphorus, arsenic, or boron to controllably increase or decrease the threshold voltage of a metal oxide semiconductor transistor. [SEMATECH]